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Journal Articles

Divacancy model for P6/P7 centers in 4H- and 6H-SiC

Son, N. T.*; Umeda, Takahide*; Isoya, Junichi*; Gali, A.*; Bockstedte, M.*; Magnusson, B.*; Ellison, A.*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; et al.

Materials Science Forum, 527-529, p.527 - 530, 2006/00

no abstracts in English

Journal Articles

Comparison of the electrical channel properties between dry- and wet-oxidized 6H-SiC MOSFETs investigated by Hall effect

Laube, M.*; Pensl, G.*; Lee, K. K.; Oshima, Takeshi

Materials Science Forum, 457-460, p.1381 - 1384, 2004/10

The electrical properties of n-channel 6H-SiC MOSFETs have been studied by temperature-dependent current-voltage and Hall effect measurements. The MOS transistors are either wet (sample A) or dry oxidized followed by a post-annealing step at 1100$$^{circ}$$C and a pyrogenic reoxidation at 800$$^{circ}$$C (sample B). Higher drain transconductance and saturation currents are observed in sample B. The Hall effect investigations show that this improvement in the performance of the MOS transistors (sample B) is caused by a lower degree of trapping of free electrons. The density of interface traps D$$_{IT}$$ close to the conduction band edge has been determined from the shift of the threshold voltage V$$_{TH}$$ as a function of the temperature and from the Hall effect results. D$$_{IT}$$ is about two times lower in sample B. The room temperature value of the electron Hall mobility is determined to be about 60 cm$$^{2}$$/Vs for both samples; it increases with decreasing temperature.

Journal Articles

EPR studies of the isolated negatively charged silicon vacancies in ${it n}$-type 4${it H}$- and 6${it H}$-SiC; Identification of ${it C}$$$_{3v}$$ symmetry and silicon sites

Mizuochi, Norikazu*; Yamasaki, Satoshi*; Takizawa, Haruki; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; Isoya, Junichi*

Physical Review B, 68(16), p.165206_1 - 165206_11, 2003/10

https://doi.org/10.1103/PhysRevB.68.165206
 Times Cited Count：41 Percentile：82.89(Materials Science, Multidisciplinary)

Isolated silicon vacancies with negative charge (V$$_{Si}$$$$^{-}$$) in 4H- and 6H-SiC were studied using EPR. The samples used in this study were irradiated with electron at 3 MeV at RT. After irradiation, the samples were annealed at 300 $$^{circ}$$C in Ar to eliminate C-related isolated vacancies. As the result of $$^{13}$$C hyperfine spectra, two kinds of V$$_{Si}$$$$^{-}$$(I) and V$$_{Si}$$$$^{-}$$(II) were distinguished and they are assigned to be arising from hexagonal and cubic sites of Si. In addition, both V$$_{Si}$$$$^{-}$$(I) and V$$_{Si}$$$$^{-}$$(II) signals have C$$_{3v}$$ symmetry, which means nearest-neighbor carbon atoms silightly distorted from a regular tetrahedron.

Journal Articles

A Comparative study of the radiation hardness of silicon carbide using light ions

Lee, K. K.; Oshima, Takeshi; Saint, A.*; Kamiya, Tomihiro; Jamieson, D. N.*; Ito, Hisayoshi

Nuclear Instruments and Methods in Physics Research B, 210, p.489 - 494, 2003/09

https://doi.org/10.1016/S0168-583X(03)01096-6
 Times Cited Count：21 Percentile：78.49(Instruments & Instrumentation)

To obtain the information on radiation damage of 6H-SiC devices, ion beam induced charge collection (IBICC) for 6H-SiC schottky diodes irradiated with proton, alpha and carbon micro beam 10$$^{8}$$ to 10$$^{13}$$ ions/cm$$^{2}$$ was studied. No significant difference of degradation was observed between p- and n-substrates irradiated with 2MeV-alpha micro beam. The decrease in IBCC shows a good agreement with the calculation using non ionizing energy loss (NIEL). As a result of ion luminescence and ultra violet photo luminescence, the level of 2.32 eV was observed.

Journal Articles

Radiation response of SiC transistors

Lee, K. K.; Oshima, Takeshi; Ito, Hisayoshi

Proceedings of 5th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, p.73 - 76, 2002/10

no abstracts in English

Journal Articles

Radiation response of p-channel 6H-SiC MOSFETs fabricated using pyrogenic conditions

Lee, K. K.; Oshima, Takeshi; Ito, Hisayoshi

Materials Science Forum, 389-393, p.1097 - 1100, 2002/05

The effect of gamma-ray irradiation on electrical characteristics of n-channel and p-chanel enhancement type 6H-SiC MOSFET was studied. The gate oxide of the MOSFETs were formed using pyrogenic condition. Gamma-ray irradiation was carried out at room temperature at 8.8 kGy(SiO$$_{2}$$)/hour. The channel mobility and thrshold voltage for the MOSFETs were estimated from I$$_{D}$$-V$$_{D}$$ and I$$_{D}$$-V$$_{D}$$ curves, respectively. The channel mobility for n-channel one does not change up to 1MGy. The channel mobility for p-channel one increases around 40 kGy and decreases above 40 kGy. This behavior is interpreted in terms of the compensation of intrinsic interface traps by the interface traps generated by irradiation. The fluctuation of thershold voltage for n-channel one by irradiation is less than 0.5V. For p-channel one, the threshold voltage decreases with increasing irradiation dose.

Journal Articles

X-ray photoelectron spectroscopy studies of post-oxidation process effects on oxide/SiC interfaces

Hijikata, Yasuto*; Yaguchi, Hiroyuki*; Yoshikawa, Masahito; Yoshida, Sadafumi*

Materials Science Forum, 389-393, p.1033 - 1036, 2002/05

no abstracts in English

Journal Articles

Effect of $$gamma$$-ray irradiation on the characteristics of 6H silicon carbide metal-oxide-seminocductor field effect transistor with hydrogen-annealed gate oxide

Oshima, Takeshi; Ito, Hisayoshi; Yoshikawa, Masahito

Journal of Applied Physics, 90(6), p.3038 - 3041, 2001/09

https://doi.org/10.1063/1.1394895
 Times Cited Count：43 Percentile：81.6(Physics, Applied)

The effect of gamma-ray irradiation on the electrical characteristics of 6H-SiC MOSFETs with hydrogen-annealed gate oxide was studied.The concentration of radiation induced interface traps increases with increasing gamma-ray dose, however, the number of interface traps is 1/100 smaller than it in Si MOSFET. The channel mobility for 6H-SiC MOSFET does not change at 30 kGy, and it becomes the half of the initial value (52 cm2/Vs) at 500 kGy.Since the channel mobility for Si MOSFET shows 50 % of the initial value at 10 kGy, this indicates that tha radiation resistance of SiC MOSFET is stronger than that of Si MOSFET. As for the cahnnel mobility vs. the concentration of radiation induced interface traps, the same behavior shows for Si and SiC MOSFETs. This suggest the channel mobility in SiC as well as Si decreases by the generation of interface traps which act as scattring centers.

Journal Articles

Crystallization of an amorphous layer in P$$^{+}$$-implanted 6H-SiC studied by monoenergetic positron beams

Uedono, Akira*; Tanigawa, Shoichiro*; Oshima, Takeshi; Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu; Frank, T.*; Pensl, G.*; Suzuki, Ryoichi*; Odaira, Toshiyuki*; et al.

Journal of Applied Physics, 87(9), p.4119 - 4125, 2000/05

https://doi.org/10.1063/1.373039
 Times Cited Count：12 Percentile：49.32(Physics, Applied)

no abstracts in English

Journal Articles

Relationship between donor activation and defect annealing in 6H-SiC hot-implanted with phosphrous ions

Oshima, Takeshi; Uedono, Akira*; Ito, Hisayoshi; Yoshikawa, Masahito; Kojima, Kazutoshi; Okada, Sohei; Nashiyama, Isamu; Abe, Koji*; Tanigawa, Shoichiro*; Frank, T.*; et al.

Materials Science Forum, 338-342, p.857 - 860, 2000/00

no abstracts in English

Journal Articles

Influence of post-oxidation annealing on electrical characteristics in 6H-SiC MOSFETs

Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Kojima, Kazutoshi; Okada, Sohei; Nashiyama, Isamu

Materials Science Forum, 338-342, p.1299 - 1302, 2000/00

no abstracts in English

Journal Articles

Oxygen-related defects in O$$^{+}$$-implanted 6H-SiC studied by monoenergetic positron beams

Uedono, Akira*; Tanigawa, Shoichiro*; Oshima, Takeshi; Ito, Hisayoshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu

Journal of Applied Physics, 86(10), p.5392 - 5398, 1999/00

https://doi.org/10.1063/1.371536
 Times Cited Count：10 Percentile：46(Physics, Applied)

no abstracts in English

Journal Articles

$$gamma$$-ray irradiation effects on 6H-SiC MOSFET

Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Aoki, Yasushi; Nashiyama, Isamu

Mater. Sci. Eng. B, 61-62, p.480 - 484, 1999/00

https://doi.org/10.1016/S0921-5107(98)00560-1
 Times Cited Count：22 Percentile：72.96(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Generation of interface traps and oxide-trapped charge in 6H-SiC metal-oxide-semiconductor transistors by $$gamma$$-ray irradiation

Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Aoki, Yasushi; Nashiyama, Isamu

Japanese Journal of Applied Physics, Part 2, 37(8B), p.L1002 - L1004, 1998/08

https://doi.org/10.1143/JJAP.37.L1002
 Times Cited Count：15 Percentile：57.75(Physics, Applied)

no abstracts in English

Journal Articles

Investigation of vacancy-type defects in P$$^{+}$$-implanted 6H-SiC using monoenergetic positron beams

Uedono, Akira*; Oshima, Takeshi; Ito, Hisayoshi; Suzuki, Ryoichi*; *; Tanigawa, Shoichiro*; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Mikado, Tomohisa*

Japanese Journal of Applied Physics, Part 1, 37(5A), p.2422 - 2429, 1998/05

https://doi.org/10.1143/JJAP.37.2422
 Times Cited Count：13 Percentile：53.6(Physics, Applied)

no abstracts in English

Journal Articles

Effects of gamma-ray irradiation and the mechanisms on electrical characteristics of SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; *; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*

Denshi Joho Tsushin Gakkai Rombunshi, C-II, 81(1), p.140 - 150, 1998/01

https://ci.nii.ac.jp/naid/110003314895

no abstracts in English

Journal Articles

Characterization of vacancy-type defects and phosphorus donors introduced in 6H-SiC by ion implantation

Oshima, Takeshi; Uedono, Akira*; Abe, Koji*; Ito, Hisayoshi; Aoki, Yasushi; Yoshikawa, Masahito; Tanigawa, Shoichiro*; Nashiyama, Isamu

Applied Physics A, 67(4), p.407 - 412, 1998/00

https://doi.org/10.1007/s003390050794
 Times Cited Count：26 Percentile：72.57(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Effects of $$gamma$$-ray irradiation on the electrical characteristics of SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Takahashi, Yoshihiro*; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*

Electronics and Communication in Japan., Part2, 81(10), p.37 - 47, 1998/00

no abstracts in English

Journal Articles

ESR studies of defects in P-type 6H-SiC irradiated with 3MeV-electrons

D.Cha*; Ito, Hisayoshi; Morishita, Norio; Kawasuso, Atsuo; Oshima, Takeshi; ; J.Ko*; K.Lee*; Nashiyama, Isamu

Mater. Sci. Forum, 264-268, p.615 - 618, 1998/00

no abstracts in English

Journal Articles

Hot-implantation of phosphorus ions into 6H-SiC

Abe, Koji*; Oshima, Takeshi; Ito, Hisayoshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Iwami, Motohiro*

Mater. Sci. Forum, 264-268, p.721 - 724, 1998/00

no abstracts in English

28 (Records 1-20 displayed on this page)